For its solar cells, WSE has entered into a partnership with CSUN, one of largest and best PV cell manufacturers in the world.
By using CSUN’s new SE (Selective Emitter) cells with up to 19% efficiency, WSE is able to deliver significantly more Watts per surface area, an invaluable advantage in any solar project.
WSE 60M PV PANEL
CHARACTERISTICS
Type
WSE 250-60M
WSE 245-60M
WSE 240-60M
Peak Power
250W
245W
240W
Voc [V]
37.3
37.2
37
Isc [A]
8.78
8.69
8.62
Vmp [V]
30.1
30
29.8
Imp [A]
8.31
8.17
8.06
All parameters of electrical characteristics are tested under STC: 1000 W/m2, AM 1.5, 25°C.
OTHER PARAMETERS
Max System Voltage
1000V (IEC)
Temperature Coefficient of Voltage
-0.36%/K
Temperature Coefficient of Current
0.03%/K
Temperature Coefficient of Power
-0.52%/K
NOCT
45°C
Fuse Current
15A
Mechanical Load
Not less than 2400Pa
Basic Structure
Front Side
Low-iron tempered glass
Back Side
Color custom composite film
Frame
Aluminum alloy
WSE 72M PV PANEL
CHARACTERISTICS
Type
WSE 300-72M
WSE 295-72M
WSE 290-72M
Peak Power
300W
295W
290W
Voc [V]
44.8
44.6
44.5
Isc [A]
8.8
8.73
8.68
Vmp [V]
36.1
35.9
35.8
Imp [A]
8.32
8.22
8.11
All parameters of electrical characteristics are tested under STC: 1000 W/m2, AM 1.5, 25°C.
OTHER PARAMETERS
Max System Voltage
1000V (IEC)
Temperature Coefficient of Voltage
-0.36%/K
Temperature Coefficient of Current
0.03%/K
Temperature Coefficient of Power
-0.52%/K
NOCT
45°C
Fuse Current
15A
Mechanical Load
Not less than 2400Pa
Basic Structure
Front Side
Low-iron tempered glass
Back Side
Color custom composite film
Frame
Solar PV Panel Features
High conversion efficiency;
Excellent performance under low lighting conditions;
Low hot spot effect, due to low reverse current density;
Low degradation under light exposure;;
which is very close to the power from the cells before encapsulation;
5-year hardware warranty;
25-year power output warranty
Main factors that affect PV conversion efficiency are as:
The number of minority carriers crossing the PN junction in unit time:
The electrical resistivity of metal electrode.
SE solar cell adopts deep and shallow junction tructures, which mainly
improve conversion efficiency from some aspects such as:
1. The shallow junction with light diffusion of cell activeareas make the number of minority carrier through PN junction more than common;
2. The voltage between the shallow junctions of metal cotact area increases the power of minority carriers;
3. The deep junction with heavy diffusion of metal electroad areas ensure the lower contact resistance between metal and semiconder.
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